| PART |
Description |
Maker |
| MTN2N70I3 |
N-Channel Enhancement Mode Power MOSF
|
Cystech Electonics Corp.
|
| SUM110N10-09-E3 SUM110N10-09 |
TERMINAL
N-Channel 100-V (D-S) 200C MOSFET
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| SHD11714411 SHD117144B |
HERMETIC POWER SCHOTTKY RECTIFIER 200C Maximum Operation Temperature
|
Sensitron
|
| SUM110N08-05 70511 |
N-Channel 75-V (D-S) 200C MOSFET
N-Channel 75-V (D-S) 200∑C MOSFET
N-Channel 75-V (D-S) 200隆?C MOSFET
N-Channel 75-V (D-S) 200°C MOSFET
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| LT582X LT582X-15 |
200C Voltage Reference
|
Linear Technology
|
| EMH2602 |
3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| ISB-A27-0 |
150 mA, 30 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Ultrathin Miniature Package 4-channel N-channel MOSFET Array
|
Sanyo Semicon Device
|
| 135D128X0006K2 135D128X0006T2 135D188X0006K2 135D2 |
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55C to 200C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55∑C to 200∑C Operation 钽案例与玻璃对钽密封密封的，55ΣC00ΣC行动
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55∑C to 200∑C Operation 钽案例与玻璃对钽密封密封的，55ΣC200ΣC行动
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55?? to 200?? Operation
|
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
|
| FDMQ8203 |
100V Dual N-Channel and Dual P-Channel PowerTrenchMOSFET, GreenBridgeSeries of High-Efficiency Bridge Rectifiers
GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench? MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ
|
Fairchild Semiconductor
|
